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1/13 february 2004 stp11nm60fd- STB11NM60FD stp11nm60fdfp - STB11NM60FD-1 n-channel 600v-0.40 ? -11ato-220/to-220fp/i 2 pak/d 2 pak fdmesh?power mosfet (with fast diode) typical r ds (on) = 0.40 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance tight process control and high manufacturing yields description the fdmesh? associates all advantages of re- duced on-resistance and fast switching with an in- trinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in par- ticular zvs phase-shift converters. applications zvs phase-shift full bridge converters for smps and welding equipment order codes type v dss r ds(on) i d stp11nm60fd stp11nm60fdfp STB11NM60FD STB11NM60FD-1 600 v 600 v 600 v 600 v <0.45 ? <0.45 ? <0.45 ? <0.45 ? 11 a 11 a 11 a 11 a part number marking package packaging stp11nm60fd p11nm60fd to-220 tube stp11nm60fdfp p11nm60fdfp to-220fp tube STB11NM60FDt4 b11nm60fd d 2 pa k tape & reel STB11NM60FD-1 b11nm60fd i 2 pa k tube to-220 1 2 3 1 2 3 to-220fp i 2 pak 1 2 3 1 3 d 2 pak internal schematic diagram
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 2/13 absolute maximum ratings ( )pulse width limited by safe operating area (1)i sd <11a, di/dt<400a/s, v dd STB11NM60FD STB11NM60FD-1 stp11nm60fdfp v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 11 11 (* ) a i d drain current (continuos) at t c =100 c 77(*)a i dm ( ) drain current (pulsed) 44 44 (*) a p tot total dissipation at t c =25 c 160 35 w derating factor 0.88 0.28 w/ c dv/dt ( 1 ) peak diode recovery voltage slope 20 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature ? 65 to 150 c t j max. operating junction temperature to-220/i 2 pak d 2 pak to-220fp rthj-case thermal resistance junction-case max 0.78 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =35v) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds =maxrating,t c = 125 c 100 a i gss gate-body leakage current (v ds =0) v gs =30v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 34 5v r ds(on) static drain-source on resistance v gs =10v,i d = 5.5 a 0.40 0.45 ?
3/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =5.5a 5.2 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1000 pf c oss output capacitance 208 pf c rss reverse transfer capacitance 28 pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 400v 100 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 3 ? symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =250v,i d =5.5a r g =4.7 ? v gs =10v (see test circuit, figure 3) 20 ns t r rise time 16 ns q g total gate charge v dd =400v,i d =11a, v gs =10v 28 40 nc q gs gate-source charge 7.8 nc q gd gate-drain charge 13 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd =400v,i d =11a, r g =4.7 ?, v gs = 10v (see test circuit, figure 5) 10 ns t f fall time 15 ns t c cross-over time 24 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forwardonvoltage i sd =11a,v gs =0 1.5 v t rr reverse recovery time i sd = 11a, di/dt = 100a/s, v dd =50v (see test circuit, figure 5) 190 ns q rr reverse recovery charge 1.1 c i rrm reverse recovery current 14.5 a
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 4/13 safe operating for to-220/i 2 pak/d 2 pak safe operating area for to-220fp thermal impedance for to-220fp thermal impedance for to-220/i 2 pak transfer characteristics output characteristics
5/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 static drain-source on resistance transconductance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 6/13 source-drain diode forward characteristics
7/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 8/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 10/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
11/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e10 10.40.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 12/13 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
13/13 stp11nm60fd - stp11nm60fdfp - STB11NM60FD - STB11NM60FD-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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